ALD growth

• Determination of growth rate already for first cycle in ALD
• Minimization of number of cycles for layer closure (pinhole free)
• Determination of layer thickness variation
• Determination of impurities at outer mono layer

Example: high-k dielectrics ALD growth of ZrO2 on SiO2

Surface coverage: 

The Zr peak increases with the number of cycles and the Si peak decreases. 
After 70 cycles there are pinholes (Si)

Thickness distribution: 

The width of the 
Zr peak (left part of red peak, see arrow) indicates islands of multiple atomic layers

See also the application note on diffusion barriers